The BJT remains a device that excels in some applications, such as discrete circuit design, due to the very wide selection of BJT types available, and because of its high transconductance and output resistance compared to MOSFETs. The BJT is also the choice for demanding analog circuits, especially for very-high-frequency applications, such as radio-frequency circuits for wireless systems. Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a BiCMOS process of wafer fabrication to create circuits that take advantage of the application strengths of both types of transistor.
- Collector-Emitter Volt (Vceo): 45V
- Collector Current (Ic): 0.1A
- hfe: 120-800 @ 2mA
- Power Dissipation (Ptot): 625mW
- Current-Gain-Bandwidth (ftotal): 320MHz
- Type: PNP
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